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| TSD1760 Low Vce(sat) NPN Transistor Pin assignment: 1. Base 2. Collector 3. Emitter BVCEO = 30V Ic = 3A VCE (SAT), = 0.25V(typ.) @Ic / Ib = 2A / 0.2A Features Low VCE (SAT). Excellent DC current gain characteristics Ordering Information Part No. TSD1760CP Packing Tape & Reel Package TO-252 Structure Epitaxial planar type. Complementary to TSB1184 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Operating Junction Temperature Operating Junction and Storage Temperature Range Note: 1. Single pulse, Pw = 2mS DC Pulse PD TJ TSTG Symbol VCBO VCEO VEBO IC Limit 40V 30V 5 3 7 (note 1) 1.0 +150 - 55 to +150 Unit V V V A W o o C C Electrical Characteristics Ta = 25 oC unless otherwise noted Parameter Static Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Transfer Ratio Transition Frequency Output Capacitance Conditions IC = 50uA, IE = 0 IC = 1mA, IB = 0 IE = 50uA, IC = 0 VCB = 40V, IE = 0 VEB = 4V, IC = 0 IC / IB = 2.0A / 0.2A VCE = 2V, IC = 1A VCE = 5V, IC = 100mA, f = 100MHz VCB = 10V, f=1MHz Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE fT Cob Min 40 30 5 ---120 -- Typ -----0.25 -90 45 Max ---1 1 0.5 560 --- Unit V V V uA uA V MHz pF Note : pulse test: pulse width <=380uS, duty cycle <=2% Classification Of hFE Rank Range Q 120 - 270 R 180 - 390 S 270 - 560 TSD1760 1-1 2003/12 rev. A Electrical Characteristics Curve TSD1760 2-2 2003/12 rev. A TO-252 Mechanical Drawing J A E F DIM A B C D E F G H I J TO-252 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 6.570 6.840 0.259 0.269 9.250 10.400 0.364 0.409 0.550 0.700 0.022 0.028 2.560 2.670 0.101 0.105 2.300 2.390 0.090 0.094 0.490 0.570 0.019 0.022 1.460 1.580 0.057 0.062 0.520 5.340 1.460 0.570 5.550 1.640 0.020 0.210 0.057 0.022 0.219 0.065 I B G D C H TSD1760 3-3 2003/12 rev. A |
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